REAP (Raster E-Beam Advanced Process) using 50kV raster E-beam system for sub-100nm node mask technologyBAIK, Ki-Ho; DEAN, Robert; MUELLER, Mark et al.SPIE proceedings series. 2002, pp 401-411, isbn 0-8194-4434-0, 2VolConference Paper

Resolution, LER and Sensitivity Limitations of PhotoresistGALLATIN, Gregg M; NAULLEAU, Patrick; NIAKOULA, Dimitra et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69211E.1-69211E.11, issn 0277-786X, isbn 978-0-8194-7106-2Conference Paper

Potential of DNQ/novolac and chemically amplified resists for 100 nm device generation maskmakingTAN, Zoilo C. H; PHUONG LE; COLEMAN, Tom et al.Microelectronic engineering. 2001, Vol 57-58, pp 531-538, issn 0167-9317Conference Paper

Understanding quencher mechanisms by considering photoacid -dissociation equilibrium in chemically-amplified resistsNAGAHARA, Seiji; LEI YUAN; NAKANO, Takanori et al.SPIE proceedings series. 2005, isbn 0-8194-5733-7, 2Vol, Part 1, 338-349Conference Paper

Quantum yields of photoacid generation in 193-nm chemically amplified resists by fluorescence imaging spectroscopyRAY, Krishanu; MASON, Michael D; GROBER, Robert D et al.Chemistry of materials. 2004, Vol 16, Num 26, pp 5726-5730, issn 0897-4756, 5 p.Article

Polymer design for 157 nm chemically amplified resistsITO, Hiroshi; WALLRAFF, Greg M; BROCK, Phil et al.SPIE proceedings series. 2001, pp 273-284, isbn 0-8194-4031-0, 2VolConference Paper

Advanced microlithography process with chemical shrink technologyKANDA, Takashi; TANAKA, Hatsuyuki; KINOSHITA, Yoshiaki et al.SPIE proceedings series. 2000, pp 881-889, isbn 0-8194-3617-8Conference Paper

Early mask results of KRS-XE and current progress in improving sensitivity and etch resistanceDEVERICH, Christina; WATTS, Andrew; MEDEIROS, David et al.SPIE proceedings series. 2002, pp 229-240, isbn 0-8194-4517-7, 12 p.Conference Paper

Novel polymers for 193 nm single layer resist based on cycloolefin polymersKIM, Hyun-Woo; LEE, Si-Hyeung; KWON, Ki-Young et al.SPIE proceedings series. 2000, pp 1100-1107, isbn 0-8194-3617-8Conference Paper

Diffusion of Amines from Resist to BARC LayerSHIRAI, Masamitsu; HATSUSE, Tatsuya; OKAMURA, Haruyuki et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7972, issn 0277-786X, isbn 978-0-8194-8531-1, 79721O.1-79721O.3, 2Conference Paper

Spectroscopic characterization of acid mobility in chemically amplified resistsJESSOP, Julie L. P; GOLDIE, Scott N; SCRANTON, Alec B et al.SPIE proceedings series. 2000, pp 161-170, isbn 0-8194-3617-8Conference Paper

In quest of predictive lithography simulationKALUS, Christian K; BUSS, Hinderk M; BROOKER, Peter D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6197-0, vol 2, 61541S.1-61541S.10Conference Paper

Advances in resist technology and processing XVII (Santa Clara CA, 28 February - 1 March 2000)Houliban, Francis M.SPIE proceedings series. 2000, isbn 0-8194-3617-8, 2 vol.(XVII, 1252 p.), isbn 0-8194-3617-8Conference Proceedings

Modeling chemically-amplified resists for 193nm lithographyCROFFIE, Ebo; MOSONG CHENG; DIMOV, Ognian et al.SPIE proceedings series. 2000, pp 171-180, isbn 0-8194-3617-8Conference Paper

Dependence of resist profile on Exposed Area RatioSHIOBARA, Eishi; KAWAMURA, Daisuke; MATSUNAGA, Kentaro et al.SPIE proceedings series. 2001, pp 628-636, isbn 0-8194-4031-0, 2VolConference Paper

0.12 micron logic process using a 248 nm step-and-scan systemBAKER, Dan; ZHENG, Tammy; TAKEMOTO, Cliff et al.SPIE proceedings series. 2000, pp 294-304, isbn 0-8194-3617-8Conference Paper

Effect of process parameters on pattern edge roughness of chemically-amplified resistsHUI PENG KOH; QUN YING LIN; XIAO HU et al.SPIE proceedings series. 2000, pp 240-251, isbn 0-8194-3617-8Conference Paper

Study of acid transport using IR spectroscopy and SEMSTEWART, Michael D; SOMERVELL, Mark H; HOANG VI TRAN et al.SPIE proceedings series. 2000, pp 665-674, isbn 0-8194-3617-8Conference Paper

The manipulation of chemically amplified resist dissolution rate behavior for improved performanceTOUKHY, M; SCHLICHT, K; MAXWELL, B et al.SPIE proceedings series. 2000, pp 638-645, isbn 0-8194-3617-8Conference Paper

Methods to improve radiation sensitivity of chemically amplified resists by using chain reactions of acid generationNAGAHARA, Seiji; SAKURAI, Yusuke; WAKITA, Masanori et al.SPIE proceedings series. 2000, pp 386-394, isbn 0-8194-3617-8Conference Paper

Surface composition of a norbornene/maleic anhydride based 193 nm photoresist for different photoacid generators as determined by X-ray photoelectron spectroscopyKRAUTTER, H. W; HOULIHAN, F. M; HUTTON, R. S et al.SPIE proceedings series. 2000, pp 1070-1078, isbn 0-8194-3617-8Conference Paper

Line edge roughness of chemically amplified resistsAZUMA, Tsukasa; CHIBA, Kenji; IMABEPPU, Maki et al.SPIE proceedings series. 2000, pp 264-269, isbn 0-8194-3617-8Conference Paper

The 193-nm photoresist development at Union Chem. Lab., ITRIFANG, Mao-Ching; CHANG, Jui-Fa; TAI, Ming-Chia et al.SPIE proceedings series. 2000, pp 919-926, isbn 0-8194-3617-8Conference Paper

Toward controlled resist line edge roughness : Material origin of line edge roughness in chemically amplified positive-tone resistsQINGHUANG LIN; SOORIYAKUMARAN, Ratnam; HUANG, Wu-Song et al.SPIE proceedings series. 2000, pp 230-239, isbn 0-8194-3617-8Conference Paper

Acid Amplifiers : Proton transfer or direct acid formationHUANG, Wu-Song; KWONG, Ranee; MOREAU, Wayne et al.SPIE proceedings series. 2000, pp 591-597, isbn 0-8194-3617-8Conference Paper